Semiconductor light source and method of making

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

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Details

C257S091000, C257S095000, C257S096000, C257S098000, C257S099000, C257S103000, C257SE33062, C257SE33069, C257SE33072, C257SE33034, C257SE33008

Reexamination Certificate

active

10912153

ABSTRACT:
A solid state light emitting device having a plurality of semiconductor finger members with side walls perpendicular to a substrate. Multiple quantum wells are formed on the side walls, and are also perpendicular to the substrate. Each multiple quantum well is sandwiched between the side wall of a finger member and a second semiconductor member of a conductivity type opposite to that of the finger member. Ohmic contacts are applied to the finger members and second semiconductor member for receiving a voltage. The device is GaN based such that emitted light will be in the UV region.

REFERENCES:
patent: 5070510 (1991-12-01), Konushi et al.
patent: 6818465 (2004-11-01), Biwa et al.
patent: 6936851 (2005-08-01), Wang
patent: 7084421 (2006-08-01), Koike et al.
patent: 2003/0218180 (2003-11-01), Fujiwara
patent: 2004/0108513 (2004-06-01), Narukawa et al.
patent: 2004/0217371 (2004-11-01), Okumura
patent: 2005/0173694 (2005-08-01), Mawst et al.
patent: 09036472 (1997-02-01), None

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