Semiconductor light receiving element and optical...

Details Semiconductor light receiving element and optical... Semiconductor light receiving element and optical...

2009-01-29

2011-10-11

Dang, Phuc (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S057000

Reexamination Certificate

active

08035187

ABSTRACT:
The present invention provides a semiconductor light receiving element capable of reducing capacity while minimizing increase in travel time of carriers. The semiconductor light receiving element includes a semiconductor stacked structure including a first conductivity type layer, a light absorbing layer, and a second conductivity type layer having a light incidence plane in order. The semiconductor light receiving element has an oxidation layer including a non-oxidation region and an oxidation region in a stacking in-plane direction in the light absorbing layer or between the first conductivity type layer and the light absorbing layer.

REFERENCES:
patent: 2004/0016932 (2004-01-01), Kondo
patent: 2005/0029530 (2005-02-01), Ouchi
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patent: HEI 04-137565 (1992-05-01), None
patent: HEI 05-021829 (1993-01-01), None
patent: HEI 05-029642 (1993-02-01), None
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patent: HEI 05-291606 (1993-11-01), None
patent: HEI 11-274545 (1999-10-01), None
patent: HEI 11-330531 (1999-11-01), None
patent: 2000-269586 (2000-09-01), None
patent: 2002-217481 (2002-08-01), None
Japanese Patent Office, Office Action issued in Patent Application JP 2008-026355, on Jan. 20, 2010.

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