Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-05-30
2010-10-05
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S444000, C257S438000, C257S184000, C257S185000, C257S186000, C257SE31005
Reexamination Certificate
active
07808065
ABSTRACT:
A semiconductor photosensitive element comprises: a semiconductor substrate of a first conductivity type; a first light absorption layer, a first semiconductor layer of a second conductivity type, a first semiconductor layer of the first conductivity type, a second light absorption layer, and a second semiconductor layer of a second conductivity type, arranged in this order on the semiconductor substrate; a first electrode connected the second semiconductor layer of the second conductivity type; a second electrode connected to the semiconductor substrate; and a third electrode electrically connecting the first semiconductor layer of the first conductivity type to the first semiconductor layer of the second conductivity type. The third electrode is located outside a light detection region for detecting optical signals.
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Ishimura Eitaro
Nakaji Masaharu
Gurley Lynne A
Kearney Naima J
Leydig , Voit & Mayer, Ltd.
Mitsubishi Electric Corporation
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