Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1997-06-30
2000-02-01
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257458, 257466, H01L 310232
Patent
active
060206209
ABSTRACT:
A semiconductor light-receiving device including (a) a semiconductor substrate, (b) a multi-layered including a first buffer layer having a first electrical conductivity and lying on the semiconductor substrate, a first clad layer having a first electrical conductivity and lying on the first buffer layer, a light-absorbing layer having a first electrical conductivity and lying on the first clad layer, a second clad layer having a second electrical conductivity and lying on the light-absorbing layer, and a second buffer layer having a second electrical conductivity and lying on the second clad layer, (c) a first electrode formed on the second buffer layer, and (d) a second electrode formed on a lower surface of the semiconductor substrate. The multi-layered structure has at least one portion which is inclined to a direction in which a light introduced into the device is directed. For instance, the multi-layered structure has opposite end portions inclined to the direction. A portion of the multi-layered structure making inclination with the direction provides the same advantageous effect as that a light-receiving area of a light-receiving layer of the multi-layered structure is effectively increased. Thus, the semiconductor light-receiving device could be readily coupled to other devices through optical fibers. In addition, there can be obtained a high coupling efficiency which is greater than 90%. Furthermore, the semiconductor light-receiving device provides a high quantum efficiency which is greater than 90%, and enables to accomplish high-speed response at a speed greater than 20 Gbps.
REFERENCES:
patent: 4438447 (1984-03-01), Copeland, III et al.
patent: 5665985 (1997-09-01), Iwata
Li et al., "Improved Performance of Strained InGaAs/GaAs Photodiodes Grown on Patterned GaAs Substrates by Molecular Beam Epitaxy", Appl. Phys. Lett., vol. 58, No. 18, May 1991, pp. 1931-1933.
Miura et al., "Planar Embedded InP/GaInAs p-i-n Photodiode for Very High-Speed Operation", Journal of Lightwave Technology, LT-5, No. 10, Oct. 1987, pp. 1371-1376.
Kato et al., "High-Efficiency Waveguide InGaAs pin Photodiode with Bandwidth of Over 40 GHz", IEEE Photonics Technology Letters, No. 5, May 1991 , pp. 473-474.
W.Q. Li et al., "Improved performance of strained InGaAs/GaAs photodiodes grown on patterned GaAs substrates by molecular beam epitaxy", pp. 1931-1933, Applied Physics Letters, vol. 58, No. 18, May 6, 1991.
Kazutoshi Kato et al., "High-efficiency waveguide InGaAs pin photodiode with bandwidth of over 40 GHz", pp. 473-474, IEEE Photonics Technology Letters, vol. 3, No. 5, May 1, 1991.
S. Miura et al., "Planar embedded InP/GaInAs p-i-n photodiode for very high-speed operation", pp. 1371-1376, Journal of Lightwave Technology, vol. Lt5, No. 10, Oct. 1987.
Kato, K., et al., "High Efficiency, Waveguide InGaAs Pin Photodiode with Bandwidth of 40GHz", Electronic Data Communication Association Spring Conference, 1991, p. 4-200.
NEC Corporation
Tran Minh Loan
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