Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...
Reexamination Certificate
2007-12-18
2007-12-18
Sefer, A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Heterojunction formed between semiconductor materials which...
C257S233000, C257S440000, C257S461000, C257SE31059, C257SE31121
Reexamination Certificate
active
10824540
ABSTRACT:
A semiconductor light receiving device is disclosed which is capable of receiving a first wavelength band light beam and a second wavelength band light beam having a shorter wavelength than that of the first wavelength band light beam. The device has a light absorbing layer of a first conductivity type formed on a semiconductor surface region of the semiconductor substrate the light absorbing layer absorbs the first and second wavelength band light beams. A cap layer of the first conductivity type is formed on the light absorbing layer. In the cap layer, a region of a second conductivity type is formed which transmits the second wavelength band light beam. A light collecting layer is formed on the semiconductor surface region and adjacently to the cap layer and the light absorbing layer. The light collecting layer has a convex shape with curvature to collect the second wavelength band light beam.
REFERENCES:
patent: 6396117 (2002-05-01), Furukawa et al.
patent: 6521968 (2003-02-01), Kuhara et al.
patent: 7167498 (2007-01-01), Mallecot et al.
patent: 2-231775 (1990-09-01), None
patent: 2860695 (1999-02-01), None
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