Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-02-01
2011-02-01
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S433000, C257S680000, C257SE31117, C257SE31119, C257SE23128, C257SE23130
Reexamination Certificate
active
07880254
ABSTRACT:
A semiconductor light receiving device includes a light receiving section made of a semiconductor provided on a substrate, an electrode provided on the substrate and configured to apply an electric field to the light receiving section, a resin layer provided above the substrate, the resin layer having an inverted conical opening, the inverted conical opening being located above the light receiving section and having an opening diameter which is smaller than the light receiving section in the vicinity of the light receiving section, is continuously enlarged with the distance from the substrate, and is larger than the light receiving section at a surface of the resin layer, and a light reflecting film made of metal and provided on a bevel of the inverted conical opening, the light reflecting film being electrically isolated from the electrode by a gap formed between the light reflecting film and the electrode. At least a portion of the resin layer located in the gap has a light blocking property.
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U.S. Appl. No. 12/164,502, filed Jun. 30, 2008, Hideto Furuyama.
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Warren Matthew E
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