Semiconductor light-receiving device

Details Semiconductor light-receiving device Semiconductor light-receiving device

2007-03-06

2007-03-06

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

Reexamination Certificate

active

09813827

ABSTRACT:
A semiconductor light-receiving device includes a plurality of first conductive type second semiconductor layers formed on a first surface of a first conductive type semiconductor substrate apart from each other. Each of the first conductive type second semiconductor layers is surrounded by a second conductive type third semiconductor layer with a first semiconductor layer therebetween. The first semiconductor layer has a lower impurity concentration than the second semiconductor layers. By completely depleting the first semiconductor layer occupying a large area within the light-receiving surface, the light entering the light-receiving surface is enabled to contribute to a photoelectric current while reducing the light absorption in the second semiconductor layers, so that the sensitivity characteristics of the semiconductor light-receiving device can be made superior and the production cost can be lowered.

REFERENCES:
patent: 6118165 (2000-09-01), Yano
patent: 10-270744 (1998-10-01), None

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