Semiconductor light receiving device

Details Semiconductor light receiving device Semiconductor light receiving device

2011-08-09

2011-08-09

Pizarro, Marcos D (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S431000, C257S436000

Reexamination Certificate

active

07994601

ABSTRACT:
The present invention provides a semiconductor light receiving device that prevents local heat generation, has high-speed, high-sensitivity characteristics even at the time of an intensive light input, and exhibits high resistance to light inputs. The semiconductor light receiving device includes light absorption layers (3, 4) formed on an InP semiconductor substrate (1) wherein a buffer layer (21) containing a quaternary compositional material is formed between the InP semiconductor substrate (1) and the light absorption layers (3, 4).

REFERENCES:
patent: 6350998 (2002-02-01), Tsuji
patent: 2006/0017129 (2006-01-01), Nakaji et al.
patent: 2006/0202297 (2006-09-01), Ishimura
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patent: 2762939 (1998-03-01), None
patent: 2001-028454 (2001-01-01), None
patent: 2004-111763 (2004-04-01), None
I. Watanabe et al., “A New Planar-Structure InAlGaAs-InAlAs Superlattice Avalance Photodiode with a Ti-Implanted Guard-Ring”, IEEE Photonics Technology Letters, vol. 8, No. 6, 1996.

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