Semiconductor light intensity modulator

Details Semiconductor light intensity modulator Semiconductor light intensity modulator

1994-01-11

1996-06-18

Epps, Georgia Y.

Optical: systems and elements

Optical modulator

Light wave temporal modulation

359245, G02F 103

Patent

active

055284132

ABSTRACT:
A semiconductor light intensity modulator utilizing the electric field absorbing effect, includes a light absorption layer which absorbs light due to the electric field absorption effect and a phase correcting semiconductor layer to which an electric field is applied independently from the light absorption layer, having a larger energy band gap than that of the light absorption layer disposed in the light waveguide path or in the vicinity thereof, of the semiconductor light intensity modulator.
In this construction, by adjusting the refractive index of the phase correcting semiconductor layer and the length of the light waveguide path, the change in the refractive index in the light absorption layer can be cancelled, whereby a semiconductor light intensity modulator free of phase modulation is obtained.

REFERENCES:
Mak et al, "High-Speed Bulk InGaAsP-InP Electroabsorption Modulators With Bandwidth In Excess Of 20 GHz", IEEE Photonics Technology Letters, vol. 2, No. 10, 1990, pp. 730-733.

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