Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1995-08-16
1998-10-20
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257607, 257742, 257103, H01L 3300
Patent
active
058250522
ABSTRACT:
A semiconductor light emitting device comprising: a substrate; and a gallium nitride type compound semiconductor layers provided on the substrate, the semiconductor layers including at least an N-type layer and a P-type layer; wherein an N-type side electrode connected to a gallium nitride type compound semiconductor of the N-type layer and a P-type side electrode connected to a gallium nitride type compound semiconductor of the P-type layer are provided, wherein the dopant for the gallium nitride type compound semiconductor layer of the P-type layer is Be.
REFERENCES:
patent: 3987480 (1976-10-01), Diguet et al.
patent: 4746964 (1988-05-01), Aronowitz
patent: 4792467 (1988-12-01), Melas et al.
patent: 5173751 (1992-12-01), Ota et al.
patent: 5274251 (1993-12-01), Ota et al.
patent: 5389799 (1995-02-01), Uemoto
patent: 5434698 (1995-07-01), Takano et al.
patent: 5563422 (1996-10-01), Nakamura et al.
IBM Technical Disclosure Bulletin, vol. 15, No. 2, p. 471 Jul. 1972 by Blum et al.
Prenty Mark V.
Rohm & Co., Ltd.
LandOfFree
Semiconductor light emmitting device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor light emmitting device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emmitting device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-247312