Semiconductor light emitting element with reflecting layers

Details Semiconductor light emitting element with reflecting layers Semiconductor light emitting element with reflecting layers

1993-08-25

1995-05-09

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 96, 257 97, 257 98, 372 50, 372 99, H01L 3300

Patent

active

054142814

ABSTRACT:
A semiconductor light emitting element comprising a semiconductor substrate having a lower electrode on its back, a pn junction, a first light reflecting layer disposed between the substrate and the pn junction, an upper electrode, and a second light reflecting layer disposed between the pn junction and the upper electrode, the second light reflecting layer being capable of substantially reflecting the light heading toward the upper electrode, which preferably has, between the pn junction and the second light reflecting layer, a semiconductor layer having a wider bandgap than that of a light emitting layer formed by said pn junction. The semiconductor light emitting element of the invention is advantageous in that the light absorption in the upper electrode can be inhibited to permit efficient output of the light heading toward the upper electrode from the element, and luminance can be greatly increased by the effective output of the light from the element.

REFERENCES:
patent: 4766470 (1988-08-01), Scholl et al.
patent: 5132750 (1992-07-01), Kato et al.
patent: 5289018 (1994-02-01), Okuda et al.

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