Semiconductor light emitting element with improved structure of

Details Semiconductor light emitting element with improved structure of Semiconductor light emitting element with improved structure of

1993-04-15

1995-01-31

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257443, 257446, 257452, 257618, 257622, 257 88, 257 93, 257 96, 257 99, 372 46, 372 48, 372 50, H01L 2714, H01L 3100, H01L 3300, H01S 319

Patent

active

053861396

ABSTRACT:
A semiconductor light emitting element in which light leakage from the vicinity of an active layer end thereof is significantly reduced, and an interval at which the element is disposed is sufficiently narrow, so that there can be realized an optimal distance-measuring accuracy when used for a light source of a camera's automatic focusing mechanism. The semiconductor light emitting element includes a double heterojunction structure such that a GaAlAs current restriction layer formed with a conductive region is formed on a GaAs semiconductor substrate and a light emitting region of the light emitting element diode is provided therein by forming a p-n junction surfaces, the semiconductor light emitting element being characterized in that a plurality of the light emitting diodes are electrically isolated from each other by a plurality of grooves formed substantially vertical to the p-n junction and an end face of the light emitting region cut through by the groove is disposed inside a vertical line drawn from an end face of the surface of the light emitting element.

REFERENCES:
patent: 4916710 (1990-04-01), Hattori
patent: 5060237 (1991-10-01), Peterson
patent: 5073806 (1991-12-01), Idei
patent: 5091757 (1992-02-01), Yoshida

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