Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-10-18
2005-10-18
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S094000, C257S095000, C257S098000, C257S103000
Reexamination Certificate
active
06956241
ABSTRACT:
A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer emitting light of a wavelength λ permitted to pass through the GaP substrate; forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions as high as0.1λ to3λ on the side surfaces.
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Abe Hirohisa
Konno Kuniaki
Sugawara Hideto
Watanabe Yukio
Hogan & Hartson LLP
Lewis Monica
Wilczewski Mary
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