Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1995-02-17
1996-07-23
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 96, 257 97, 257103, 372 45, 372 46, 372 44, H01L 3300
Patent
active
055392393
ABSTRACT:
A semiconductor light emitting element includes a wide band gap energy II-VI semiconductor layer on a p type III-V semiconductor substrate and a III-V semiconductor buffer layer between the semiconductor substrate and the wide band gap energy II-VI semiconductor layer having a band gap energy intermediate those of the semiconductor substrate and the wide band gap energy II-VI semiconductor layer. Energy spikes in the valence band of the element are reduced and the injection efficiency of holes is increased so that a semiconductor light emitting element having a low operation voltage is produced.
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Kawazu Zempei
Kimura Tatsuya
Mintel William
Mitsubishi Denki & Kabushiki Kaisha
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