Semiconductor light emitting element with grooves

Coherent light generators – Particular component circuitry – Optical pumping

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357 16, 357 55, 372 48, 372 46, 372 50, H01L 3300

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050738062

ABSTRACT:
To form a semiconductor light emitting element provided with three light emitting portions into a monolithic structure, the element of double heterojunction structure has a p-type GaAs semiconductor substrate, an n-type GaAlAs current restriction layer formed with conductive regions arranged at regular intervals, a p-type GaAlAs cladding layer, a p-type GaAlAs active layer, an n-type GaAlAs cladding layer, and two grooves formed extending from the surface of the n-type GaAlAs cladding layer deep through the p-type GaAlAs active layer and between the two adjacent conductive regions. Since the three light emitting portions are formed at precise intervals in a monolithic structure, when mounted on a camera for use with an automatic focusing mechanism, it is possible to measure a distance to a subject in trigonometrical survey without the subject being out of focus.

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patent: 4947401 (1990-08-01), Hinata et al.
T. Sugahara, et al., "High Radiance AlGaAs DH LED Array by MBE", Fujitsu-Scientific and Technical Journal, vol. 19, No. 3, 1983, Kawasaki JP, pp. 315-322.
K. Fukuoka et al., "High-Power Infrared LED for Autofocus", Toshiba Review, vol. 41, No. 2, pp. 145-148, Feb. 1986.
English Language Abstract for Japanese Pat. 63-169775.

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