Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1997-08-29
1999-11-23
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 96, 257 97, 257 99, 257100, 257627, 257628, H01L 3300
Patent
active
059904976
ABSTRACT:
A semiconductor light emitting element exhibiting a characteristic of deflected luminous intensity distribution, a semiconductor light emitting device capable of making, even when the element is off the center, a luminous center close to the center, and an element scribing method having a high element separation rate without causing a crack and chipping of pellet edges. The semiconductor light emitting element involves the use of a scribed pellet 10 into which a wafer including a semiconductor layer such as a luminous layer that is stacked on a compound semiconductor substrate inclined at 5.degree. through 20.degree. to a surface (100) in a orientation [011], is subjected to an element separation process by a scribing method.
REFERENCES:
patent: 3841917 (1974-10-01), Shannon
patent: 5550675 (1996-08-01), Komatsu
Ariizumi Yoshio
Kamakura Takanobu
Komoto Takumi
Nakamura Takafumi
Sanda Shinichi
Kabushiki Kaisha Toshiba
Mintel William
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