Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2007-01-09
2007-01-09
Malsawma, Lex H. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257SE33074
Reexamination Certificate
active
11117406
ABSTRACT:
Projections/depressions forming a two-dimensional periodic structure are formed in a surface of a semiconductor multilayer film opposing the principal surface thereof, while a metal electrode with a high reflectivity is formed on the other surface. By using the diffracting effect of the two-dimensional periodic structure, the efficiency of light extraction from the surface formed with the projections/depressions can be improved. By reflecting light emitted toward the metal electrode to the surface formed with the projections/depressions by using the metal electrode with the high reflectivity, the foregoing effect achieved by the two-dimensional periodic structure can be multiplied.
REFERENCES:
patent: 6495862 (2002-12-01), Okazaki et al.
patent: 2004/0016936 (2004-01-01), Tanaka et al.
patent: 2005/0029528 (2005-02-01), Ishikawa
patent: 2000-196152 (2000-07-01), None
patent: 2004-128445 (2004-04-01), None
Malsawma Lex H.
McDermott Will & Emery LLP
LandOfFree
Semiconductor light emitting element, semiconductor light... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor light emitting element, semiconductor light..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting element, semiconductor light... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3736090