Semiconductor light emitting element, method for...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Reexamination Certificate

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C257S099000, C257S104000, C257SE33059, C257SE33005

Reexamination Certificate

active

07863637

ABSTRACT:
The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion.

REFERENCES:
patent: 2004/0048471 (2004-03-01), Okagawa et al.
patent: 2004/0113166 (2004-06-01), Tadatomo et al.
patent: 2004/0206299 (2004-10-01), Tadatomo et al.
patent: 2006/0043399 (2006-03-01), Miyagaki et al.
patent: 2006/0043419 (2006-03-01), Tachibana et al.
patent: 2007/0026643 (2007-02-01), Tadatomo et al.
patent: 2007/0026644 (2007-02-01), Tadatomo et al.
patent: 2008/0048194 (2008-02-01), Kudo et al.
patent: 2008/0135868 (2008-06-01), Okagawa et al.
patent: 2003-258302 (2003-09-01), None

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