Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2004-06-09
2009-02-10
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S102000, C257SE33003, C257SE33058, C257SE33074
Reexamination Certificate
active
07488989
ABSTRACT:
A light emitting element comprises a GaP substrate and a mesa portion. The GaP substrate includes a major surface inclined to the <011> direction from the {100} plane and a side surface covered with inequalities substantially. The mesa portion has a light emitting multi-layer of InGaAlP based material provided on the major surface. A part of a light emitted from the light emitting multi-layer is extracted through the side surface of the GaP substrate.
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Patent Abstracts of Japan, JP 2003-338637, Nov. 28, 2003.
Fujiwara Akihiro
Konno Kuniaki
Nakamura Takafumi
Nitta Koichi
Sugawara Yasuharu
Ingham John C
KabushikI Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Weiss Howard
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