Semiconductor light-emitting element having transparent electrod

Details Semiconductor light-emitting element having transparent electrod Semiconductor light-emitting element having transparent electrod

1998-04-15

2000-09-19

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

257 94, 257 96, 257 99, 257103, 257102, H01L 3300

Patent

active

061216356

ABSTRACT:
A current blocking layer (7) formed immediately below a transparent electrode (9) is formed of a semiconductor layer containing Al, and a bandgap equal to or longer than the emission wavelength. Since the current blocking layer (7) is formed of such semiconductor layer, an oxide film forms on or near the surface of the current blocking layer (7) in a process of forming the transparent electrode (9) such as an ITO film containing oxygen, and the current blocking layer functions effectively. The diameter of a bonding electrode (20) is set to be smaller than that of the current blocking layer (7), thus effectively outputting the light emitted. Furthermore, the oxidized current blocking layer can have a high breakdown voltage and, hence, can be formed to have a small thickness, thus improving step coverage upon forming the transparent electrode on the current blocking layer. By inserting a thin Zn layer (8) between the transparent electrode (9) and an ohmic layer (6), the adhesion therebetween can be improved.

REFERENCES:
patent: 5226053 (1993-07-01), Cho et al.
patent: 5481122 (1996-01-01), Jou et al.
patent: 5744828 (1998-04-01), Nozaki et al.
patent: 5814839 (1998-09-01), Hosoba
patent: 5933443 (1999-08-01), Mushiage et al.

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