Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis
Reexamination Certificate
2011-03-29
2011-03-29
Smith, Matthew S (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With specified crystal plane or axis
C257SE33003, C438S033000
Reexamination Certificate
active
07915714
ABSTRACT:
There are provided a semiconductor light emitting element which allows an improvement in light extraction efficiency without increasing the number of fabrication steps, and a wafer. In a semiconductor light emitting element1formed by laminating a compound semiconductor layer3on a single crystal substrate, and dividing the single crystal substrate into pieces, the side faces21to24of each of substrate pieces2as the divided single crystal substrate are formed such that the side face21used as the reference of the substrate piece2forms an angle of 15° with respect to the (1-100) plane, and that the side faces21to24are formed of planes different from cleaved planes of a crystalline structure in the single crystal substrate.
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Kamei Hidenori
Shinagawa Syuuichi
Fan Michele
McDermott Will & Emery LLP
Panasonic Corporation
Smith Matthew S
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