Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2005-09-06
2005-09-06
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000
Reexamination Certificate
active
06940099
ABSTRACT:
A gallium nitride compound semiconductor light emitting element has a nitride layered body formed on a translucent substrate. A P type pad electrode, an N type pad electrode and a P type electrode are formed at the layered body, each having the desired reflectance. The thickness of the translucent substrate and the nitride layered body stacked thereon of the semiconductor light emitting element is 60 μm to 460 μm.
REFERENCES:
patent: 4316208 (1982-02-01), Kobayashi et al.
patent: 5760423 (1998-06-01), Kamakura et al.
patent: 6369506 (2002-04-01), Hata
patent: 6794684 (2004-09-01), Slater et al.
patent: 1218996 (1999-06-01), None
patent: 05343742 (1993-12-01), None
patent: 2000-183400 (2000-06-01), None
Chinese Office Action mailed May 28, 2004, for Chinese Patent Application 02142952.9 filed Sep. 14, 2001, 13 pages.
Fudeta Mayuko
Hata Toshio
Tatsumi Masaki
Yamamoto Kensaku
Jackson Jerome
Morrison & Foerster / LLP
Sharp Kabushiki Kaisha
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