Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2006-10-31
2006-10-31
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S029000, C438S031000, C438S046000
Reexamination Certificate
active
07129103
ABSTRACT:
A semiconductor light-emitting element 10 includes a silicon single crystal substrate 20 having a first and a second surfaces 20a, 20bin head-tail relationship with each other, a GaN-based semiconductor laminate 40 formed on a selected region of the first surface with a predetermined conductive intermediate layer 25 interposed therebetween, a first electrode layer 51 having a portion in contact with an uppermost layer of the GaN-based semiconductor laminate 40 and insulated from the monocrystal silicon substrate, and a second electrode layer 52 formed on a suitable portion of the monocrystal silicon substrate. The monocrystal silicon substrate 20 is formed with a light guide 30 for directing light emitted from the GaN-based semiconductor laminate 40 toward the second surface 20b.
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Hamre Schumann Mueller & Larson P.C.
Picardat Kevin M.
Rohm & Co., Ltd.
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