Semiconductor light emitting element and method of making...

Optical waveguides – Integrated optical circuit

Reexamination Certificate

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Details

C385S129000, C385S130000, C385S131000, C257S012000, C257S013000, C257S022000, C257S097000, C257S103000

Reexamination Certificate

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06898340

ABSTRACT:
A semiconductor light-emitting element10includes a silicon single crystal substrate20having a first and a second surfaces20a, 20bin head-tail relationship with each other, a GaN-based semiconductor laminate40formed on a selected region of the first surface with a predetermined conductive intermediate layer25interposed therebetween, a first electrode layer51having a portion in contact with an uppermost layer of the GaN-based semiconductor laminate40and insulated from the monocrystal silicon substrate, and a second electrode layer52formed on a suitable portion of the monocrystal silicon substrate. The monocrystal silicon substrate20is formed with a light guide30for directing light emitted from the GaN-based semiconductor laminate40toward the second surface20b.

REFERENCES:
patent: 5900650 (1999-05-01), Nitta
patent: 6426512 (2002-07-01), Ito et al.
patent: 6825499 (2004-11-01), Nakajima et al.
patent: 20030042505 (2003-03-01), Ito et al.
patent: 20030183835 (2003-10-01), Moku et al.
patent: 5-13816 (1993-01-01), None
patent: 2000-31534 (2000-01-01), None

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