Semiconductor device manufacturing: process – Chemical etching – Having liquid and vapor etching steps
Reexamination Certificate
2007-11-19
2009-11-03
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Having liquid and vapor etching steps
C257SE21229, C438S042000
Reexamination Certificate
active
07611992
ABSTRACT:
A semiconductor light emitting element including a conductive substrate, a bonding metal layer formed on the conductive substrate, a barrier layer formed on the bonding metal layer, a reflective layer formed on the barrier layer, an ohmic electrode layer formed on the reflective layer, a second conductivity type semiconductor layer formed on the ohmic electrode layer, a light emitting layer formed on the second conductivity type semiconductor layer, and a first conductivity type semiconductor layer formed on the light emitting layer, wherein outer peripheries of the second conductivity type semiconductor layer, the light emitting layer, and the first conductivity type semiconductor layer are removed, and a method of manufacturing the same are provided.
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Morrison & Foerster / LLP
Sharp Kabushiki Kaisha
Taylor Earl N
Vu David
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