Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2004-08-13
2009-06-30
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S094000, C257SE33028
Reexamination Certificate
active
07554127
ABSTRACT:
Disclosed is a semiconductor light-emitting element, comprising an n-type cladding layer; a light guide layer positioned on the n-type cladding layer; a multiple quantum well structure active layer positioned on the light guide layer; a p-type carrier overflow prevention layer positioned on the active layer and having an impurity concentration of 5×1018cm−3to not more than 3×1019cm−3; a p-type light guide layer positioned on the p-type carrier overflow prevention layer and having an impurity concentration of 1×1018cm−3or more and less than that of the p-type carrier overflow prevention layer; and a p-type cladding layer positioned on the p-type light guide layer and having a band gap narrower than the p-type carrier overflow prevention layer, and a method of manufacturing the same.
REFERENCES:
patent: 6015979 (2000-01-01), Sugiura et al.
patent: 6252894 (2001-06-01), Sasanuma et al.
patent: 6434178 (2002-08-01), Ubukata
patent: 6586762 (2003-07-01), Kozaki
patent: 6907056 (2005-06-01), Botez
patent: 2002/0094002 (2002-07-01), Amano et al.
patent: 2003/0001168 (2003-01-01), Tsuda et al.
patent: 10-056236 (1998-02-01), None
patent: 10-145000 (1998-05-01), None
patent: 10-145002 (1998-05-01), None
patent: 11-340580 (1999-12-01), None
patent: 2000-299497 (2000-10-01), None
patent: 2002-335052 (2002-11-01), None
patent: 2003-115641 (2003-04-01), None
patent: 2003-204122 (2003-07-01), None
English translation (machine translation) of JP 2003-115641.
Japanese Office Action dated Jan. 30, 2007 im Application No. JP2004-227579.
Final Office Action in Japanese Application No. 2004-227579 mailed May 29, 2007.
Onomura Masaaki
Tanaka Akira
Banner & Witcoff Ltd
Kabushiki Kaisha Toshiba
Wilson Allan R.
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