Semiconductor light-emitting element and method of...

Details Semiconductor light-emitting element and method of... Semiconductor light-emitting element and method of...

2007-12-25

2007-12-25

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S103000

Reexamination Certificate

active

10535175

ABSTRACT:
The semiconductor light-emitting element uses a compound semiconductor quantum well structure comprising a well layer, and barrier layers between which the well layer is sandwiched, as an active layer. In the adjacent well layer and barrier layers of the semiconductor light-emitting element, the well layer has in part a doped well region to which an n-type impurity is added at the interface with the barrier layer on the electron injection side, and in the vicinity of this interface, and the barrier layer has a doped barrier region to which the n-type impurity is added at least at the interface and in the vicinity of this interface.

REFERENCES:
patent: 6649942 (2003-11-01), Hata et al.
patent: 6665329 (2003-12-01), Crawford et al.
patent: 6806502 (2004-10-01), Iyechika et al.
patent: 6833564 (2004-12-01), Shen et al.
patent: 6835962 (2004-12-01), Udagawa
patent: 2002/0008242 (2002-01-01), Hata
patent: 2002/0053676 (2002-05-01), Kozaki

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