Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1996-07-18
1999-11-23
Kelley, Nathan K.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 79, 257 13, H01L 3300
Patent
active
059904950
ABSTRACT:
A semiconductor light-emitting element comprising a monocrystal substrate; a buffer layer formed directly on the monocrystal substrate and comprising a monocrystal Al.sub.x Ga.sub.1-x N layer (0<x<1); and element-forming layer formed on the buffer layer and comprising Al.sub.x Ga.sub.y In.sub.1-x-y N (0.ltoreq.x+Y.ltoreq.1, 0.ltoreq.x, Y.ltoreq.1). The half-value width of an X-ray rocking curve of the buffer layer should preferably be 5 minutes or less, more preferably 90 seconds or less.
REFERENCES:
patent: 5247533 (1993-09-01), Okazaki et al.
patent: 5290393 (1994-03-01), Nakamura
patent: 5523589 (1996-06-01), Edmond et al.
S. Yoshida, et al., "Improvements on the Electrical and Luminesceent Properties of Reactive Molecular Beam Epitaxially Grown GaN Films by Using AIN-coated Sapphire Substrates". Appl. Phys. Lett., vol. 42, (pp. 427-429), Mar. 1, 1983.
K. Hiramatsu, et al., "Growth Mechanism of GaN Grown on Sapphire with AlN Buffer Layer by MOVPE". Journal of Crystal Growth, vol. 115, (pp. 628-633), 1991.
P. Kung, et al., "High Quality AIN and GaN Epilayers Grown on (00.cndot.1) Sapphire, (100), and (111) Silicon Substrates". Appl. Phys. Lett., vol. 66, (pp. 2958-2960), May 29, 1995.
Kabushiki Kaisha Toshiba
Kelley Nathan K.
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