Semiconductor light-emitting element and method for manufacturin

Details Semiconductor light-emitting element and method for manufacturin Semiconductor light-emitting element and method for manufacturin

1995-06-01

1996-01-30

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 86, 257103, H01L 3300, H01L 2715, H01L 3112

Patent

active

054882354

ABSTRACT:
A semiconductor light-emitting element has a crystal layer formed from aluminum of a high mol ratio of 60% or greater on the light producing surface. In the semiconductor light-emitting element, a conductive crystal with aluminum of a mol ratio of 50% or less, or a conductive crystal containing no aluminum is formed on the high aluminum crystal layer.

REFERENCES:
patent: 4368098 (1983-01-01), Manasevit
patent: 4910571 (1990-03-01), Kasahara et al.
patent: 5048035 (1991-09-01), Sugawara et al.
patent: 5103271 (1992-04-01), Izamiya et al.

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