Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2007-07-13
2011-10-04
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257SE33062
Reexamination Certificate
active
08030677
ABSTRACT:
A semiconductor light-emitting device according to the present invention includes: a GaN substrate1containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure10provided on a main surface of the GaN substrate1; a p-electrode17formed on the multilayer structure10; a first n-electrode18substantially covering the entire rear surface of the GaN substrate1; and a second n-electrode20provided on the first n-electrode18so as to expose at least a portion of the periphery of the first n-electrode18.
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English language translation of Japanese Kokai 2005-045054 to Furukawa, Jan. 2011.
International Search Report for corresponding Application No. PCT/JP2007/064004 dated Jul. 30, 2007.
PCT/ISA/237 and concise explanation, Jul. 30, 2007.
Anzue Naomi
Hasegawa Yoshiaki
Ishibashi Akihiko
Sugahara Gaku
Yokogawa Toshiya
Panasonic Corporation
Prenty Mark
Renner , Otto, Boisselle & Sklar, LLP
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