Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Between different group iv-vi or ii-vi or iii-v compounds...
Reexamination Certificate
2008-05-06
2008-05-06
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Between different group iv-vi or ii-vi or iii-v compounds...
C257S018000, C257S103000, C438S022000
Reexamination Certificate
active
07368766
ABSTRACT:
The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
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Adachi Hideto
Fukuhisa Toshiya
Ishibashi Akihiko
Kamiyama Satoshi
Kidoguchi Isao
Cao Phat X.
Kalam Abul
Matsushita Electric - Industrial Co., Ltd.
RatnerPrestia
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