Semiconductor light emitting element and manufacturing...

Details Semiconductor light emitting element and manufacturing... Semiconductor light emitting element and manufacturing...

2010-01-12

2011-11-01

Wilson, Allan R (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C257S098000, C257SE33067, C257SE33069, C257SE21087, C257SE21220

Reexamination Certificate

active

08048700

ABSTRACT:
A semiconductor light-emitting device (LE1) comprises a multilayer structure LS generating light. This multilayer structure includes a plurality of laminated compound semiconductor layers (3to8) and has first and second main faces (61, 62) opposing each other. A first electrode (21) and a second electrode (31) are arranged on the first and second main faces, respectively. A film made of silicon oxide (10) is also formed on the first main face so as to cover the first electrode. A glass substrate (1) optically transparent to the light generated by the multilayer structure is secured to the multilayer structure through the film made of silicon oxide.

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