Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2007-05-01
2007-05-01
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S098000
Reexamination Certificate
active
10812036
ABSTRACT:
An improvement in electrode reliability is realized by preventing over-etching on a peripheral lower portion of an electrode while maintaining the flow of steps of roughening a surface after forming the electrode on a semiconductor substrate. After a P-side electrode4is formed on a main surface3aof a semiconductor substrate3,a surface of the P-side electrode4is selectively covered with a protective film12,after the semiconductor substrate3is cut into chips, the surface is roughened from above the protective film12,the main surface3aaround the P-side electrode4and a side surface are roughened with a non-chemical treatment region10which is a non-roughened surface region being left in a peripheral portion of the P-side electrode4covered with the protective film12,and thereafter the protective film12is removed.
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Matsuoka Hiroyuki
Sunachi Naoya
Crane Sara
Dowa Electronics Materials Co., Ltd.
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