Semiconductor light-emitting element and manufacturing...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S098000

Reexamination Certificate

active

10812036

ABSTRACT:
An improvement in electrode reliability is realized by preventing over-etching on a peripheral lower portion of an electrode while maintaining the flow of steps of roughening a surface after forming the electrode on a semiconductor substrate. After a P-side electrode4is formed on a main surface3aof a semiconductor substrate3,a surface of the P-side electrode4is selectively covered with a protective film12,after the semiconductor substrate3is cut into chips, the surface is roughened from above the protective film12,the main surface3aaround the P-side electrode4and a side surface are roughened with a non-chemical treatment region10which is a non-roughened surface region being left in a peripheral portion of the P-side electrode4covered with the protective film12,and thereafter the protective film12is removed.

REFERENCES:
patent: 5040044 (1991-08-01), Noguchi et al.
patent: 5779924 (1998-07-01), Krames et al.
patent: 6277665 (2001-08-01), Ma et al.
patent: 7037738 (2006-05-01), Sugiyama et al.
patent: 7-162037 (1995-06-01), None
patent: A 10-200162 (1998-07-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor light-emitting element and manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor light-emitting element and manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light-emitting element and manufacturing... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3758696

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.