Semiconductor light emitting element

Details Semiconductor light emitting element Semiconductor light emitting element

1994-10-27

1995-08-15

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 96, 257 97, 257101, 257102, 372 43, 372 44, H01L 3300

Patent

active

054422027

ABSTRACT:
A semiconductor light emitting element comprising plural semiconductor layers inclusive of a light emitting part having a pn junction, which are laminated on a crystal substrate, wherein a first semiconductor layer, having a carrier concentration of not more than 5.times.10.sup.17 cm.sup.-3 and a band gap of not less than the energy of the light emitted from the light emitting part, is formed in the passage of the light emitted from the light emitting part toward the substrate side, and a second semiconductor layer, having a carrier concentration of not more than 5.times.10.sup.17 cm.sup.-3 and a band gap of not greater than the energy of the light emitted from the light emitting part, is formed behind (when seen from the passage of the light) the first layer. According to the present invention, sub-peak wavelength light emission can be suppressed to a satisfactory degree.

REFERENCES:
patent: 4414558 (1983-11-01), Nishizawa et al.
patent: 4864369 (1989-09-01), Snyder et al.
patent: 5077588 (1991-12-01), Yamada et al.
patent: 5272362 (1993-12-01), Yagi et al.
patent: 5323027 (1994-06-01), Yamada et al.

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