Semiconductor light emitting element

Details Semiconductor light emitting element Semiconductor light emitting element

2005-11-23

2008-11-11

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S079000, C257S101000, C257S103000, C257SE33001

Reexamination Certificate

active

07449722

ABSTRACT:
A semiconductor light emitting element has a first conductive-type cladding layer, an undoped active layer, a second conductive-type cladding layer, and a second conductive-type current spreading layer that are formed on a first conductive-type semiconductor substrate. The second conductive-type cladding layer has a first dopant suppressing layer formed at a portion in the second conductive-type cladding layer, the portion being not in contact with the active layer. The first dopant suppressing layer has a dopant concentration lower than a region in the vicinity of the first dopant suppressing layer.

REFERENCES:
patent: 5444269 (1995-08-01), Adomi et al.
patent: 5856682 (1999-01-01), Sasaki
patent: 2002/0179923 (2002-12-01), Morita et al.
patent: 2007/0075321 (2007-04-01), Konno et al.
patent: 1176500 (2004-11-01), None
patent: 3195194 (2001-06-01), None
Chinese Office Actiondated Jan. 4, 2008, with English translation.

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