Semiconductor light emitting element

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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257 98, 257101, 372 44, 372 50, 372 98, H01L 2941, H01L 3300, H01S 319

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active

054282276

ABSTRACT:
A semiconductor light emitting element has a semiconductor laminating structure formed on a semiconductor substrate and having a junction portion formed in parallel with a semiconductor substrate face; a light generating portion formed in the vicinity of the junction portion such that an electric current can be injected into the light generating portion; a light emitting end face approximately perpendicular to the junction portion and approximately having an arc or hyperbolic shape in a direction parallel to the semiconductor substrate face; and an electrode for electric current injection formed in an upper portion of the semiconductor laminating structure and arranged in a position separated from at least a center of curvature of the arc light emitting end face. The semiconductor light emitting element has a shape of the light emitting portion and a layer structure capable of controlling a radiant angle of light. Since the light emitting end face is formed in an arc shape, a full angle at half maximum of emitted light in a horizontal direction with respect to the substrate face can be reduced in comparison with a case in which the light emitting end face has a linear shape. Optical coupling efficiency with respect to an optical fiber and a lens system can be improved.

REFERENCES:
patent: 4815084 (1989-03-01), Scifres
patent: 5117477 (1992-05-01), Satoh
patent: 5200605 (1993-04-01), Satoh et al.
patent: 5264849 (1993-11-01), Kondoh
"O plus E", Mar., 1991, pp. 112-117.

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