Semiconductor light-emitting element

Details Semiconductor light-emitting element Semiconductor light-emitting element

2008-03-25

2008-03-25

Tran, Long K. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S077000, C257S082000, C257S173000, C438S022000, C438S604000

Reissue Patent

active

11083331

ABSTRACT:
In a semiconductor light-emitting element, an underlayer is composed of a high crystallinity AlN layer having a FWHM in X-ray rocking curve of 90 seconds or below, and a first cladding layer is composed of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer.

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