Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2007-10-30
2007-10-30
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257SE33034
Reexamination Certificate
active
10905759
ABSTRACT:
A semiconductor light emitting element includes an conductive oxide film containing at least one element selected from the group consisting of zinc, indium, tin, and magnesium that is electrically connected to the semiconductor layer. The conductive oxide film includes a plurality of voids in the vicinity of the interface with the semiconductor layer.
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Margalith et al. “Indium Tin Oxide contacts to gallium nitride optoelectronic devices” Applied Physics Letter 74,3930, 1999.
Deguchi Koichiro
Honjo Koji
Kasai Hisashi
Kususe Takeshi
Yamada Takao
Baumeister B. William
Global IP Counselors, LLP
Nichia Corporation
Reames Matthew L.
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