Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2005-08-30
2005-08-30
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S079000, C257S094000, C257S096000
Reexamination Certificate
active
06936864
ABSTRACT:
A semiconductor light emitting element comprising: a first layer; a semiconductor light emitting layer; a current blocking layer; a second layer; a first electrode; and a second electrode is provided. The semiconductor light emitting layer is selectively provided on the first layer. The current blocking layer of high resistance is provided around the semiconductor light emitting layer on the first layer. The second layer is provided on the semiconductor light emitting layer and the current blocking layer. The first electrode is provided on the second layer. The second electrode is provided on the back of the first layer. A part of a light emitted from the semiconductor light emitting layer is emitted outside through the first layer, and a part of the light emitted from the semiconductor light emitting layer is emitted outside through the second layer.
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Flynn Nathan J.
Hogan & Hartson LLP
Mondt Johannes
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