Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2005-08-02
2005-08-02
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S431000, C257S432000
Reexamination Certificate
active
06924515
ABSTRACT:
The invention is to realize such a semiconductor light-emitting element which is higher in external quantum efficiency than an existing LED, and lower in production cost than an existing semiconductor laser. The light transmission insulating film is formed on a continuously incline face comprising the semiconductor layers having an opening angle etched in right angled V. The V shape incline is formed by a known technique, and both left and right inclined faces have the angle of 45°. Depending on the length of δ or the position of the light reflecting portion, probability that the light in duration of resonance is reflected may be made optimum or preferable. According to this structure, it is no longer necessary to carry out processing treatments of high degree, high precision, or high cost such as, e.g., multi-layered film coating in a resonance direction, and it is possible to structure the semiconductor light-emitting element having a resonating mechanism as a resonator though not forming end faces of high cost.
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Ito Jun
Senda Masanobu
McGinn & Gibb PLLC
Ortiz Edgardo
Thomas Tom
Toyoda Gosei Co,., Ltd.
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