Semiconductor light-emitting element

Details Semiconductor light-emitting element Semiconductor light-emitting element

2008-03-25

2008-03-25

Tran, Long K. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S077000, C257S082000, C257S173000, C438S022000, C438S604000

Reissue Patent

active

RE040163

ABSTRACT:
In a semiconductor light-emitting element, an underlayer is composed of a high crystallinity AlN layer having a FWHM in X-ray rocking curve of 90 seconds or below, and a first cladding layer is composed of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer.

REFERENCES:
patent: 5075742 (1991-12-01), Gerard et al.
patent: 5523589 (1996-06-01), Edmond et al.
patent: 5684309 (1997-11-01), McIntosh et al.
patent: 5963787 (1999-10-01), Kimura et al.
patent: 6177292 (2001-01-01), Hong et al.
patent: 6177684 (2001-01-01), Sugiyama
patent: 0 437 385 (1991-07-01), None
patent: 09-018053 (1997-01-01), None
patent: 09/064477 (1997-03-01), None
patent: 10-027923 (1998-01-01), None
patent: 10-079501 (1998-03-01), None
patent: 11-340147 (1999-12-01), None
patent: 11-354839 (1999-12-01), None
patent: 11-354840 (1999-12-01), None
patent: 11-354842 (1999-12-01), None
patent: 2000-091703 (2000-03-01), None
Damilano et al., “From visible to white light emission by GaN quantum dots on Si(111) substrate”, American Institute of Physics, Applied Physics Letters, vol. 75, No. 7, Aug. 16 1999, pp. 962-964.
Rouviére et al., “Preferential nucleation of GaN quantum dots at the edge of A1N threading dislocations”, American Institute of Physics, Applied Physics Letters, vol. 75, No. 17, Oct. 25, 1999, pp. 2632-2634.
Hirayama et al., “Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on A1GaN surfaces”, American Institute of Physics, Applied Physics Letters, vol. 72, No. 14, Apr. 6, 1998, pp. 1736-1738.
Widmann et al., “Growth kinetics and optical properties of self-organized GaN quantum dots”, American Institute of Physics, Journal of Applied Physics, vol. 83, No. 12, Jun. 15, 1998, pp. 7618-7624.
Ohba et al., “Growth of High-Quality A1N and A1N/GaN/A1N Heterostructure on Sapphire Substrate”, Jpn. J. Appl. Phys. Vol. 35 (1996), Part 2, No. 8B, Aug. 15 1996, pp. L1013-L1015.
Yamamoto et al., “Nitridation effects of substrate surface on the metalorganic chemical vapor deposition growth of InN on Si and α-A12, O3substrates”, 2300 Journal of Crystal Growth, 127 (1994) Apr., Nos. 3/4, pp. 415-420.

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