Semiconductor light emitting element

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices

Reexamination Certificate

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Details

C257S091000, C257S092000, C257S099000, C257SE33025, C257SE33062, C257SE33065

Reexamination Certificate

active

07939836

ABSTRACT:
A semiconductor light emitting element having a rectangular shape in plan view comprising at least a first side and a second side adjacent to the first side, the semiconductor light emitting element including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, a plurality of first electrodes having a long shape along the first side and being arranged on the first conductivity-type semiconductor layer in a lattice form of x columns (x≧2) along the first side and y rows (y>x) along the second side, and a second electrode arranged on the second conductivity-type semiconductor layer. The first electrode and the second electrode are arranged on the same surface side. The first electrode is surrounded by the first conductivity-type semiconductor layer, the second conductivity-type semiconductor layer, and the second electrode is provided.

REFERENCES:
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patent: 2005/0253156 (2005-11-01), Horio et al.
patent: 2006/0231852 (2006-10-01), Kususe et al.
patent: 2007/0241348 (2007-10-01), Inoue et al.
patent: 2008/0142821 (2008-06-01), Sakamoto et al.
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patent: 2000-174348 (2000-06-01), None
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patent: 2006019347 (2006-01-01), None
patent: 2007-311764 (2007-11-01), None
patent: 2008-34821 (2008-02-01), None
patent: 2008-34822 (2008-02-01), None
patent: WO-2008/047325 (2008-04-01), None
JP 2006-019347 A—machine translation.

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