Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2008-06-27
2009-10-27
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S012000, C257S094000, C257SE33001, C977S773000, C977S774000, C438S046000, C438S047000, C438S795000, C438S796000, C438S962000
Reexamination Certificate
active
07608853
ABSTRACT:
Provided is a semiconductor light emitting diode that uses a silicon nano dot and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting layer that emits light; a hole injection layer formed on the light emitting layer; an electron injection layer formed on the light emitting layer to face the hole injection layer; a metal layer that includes a metal nano dot and is formed on the electron injection layer; and a transparent conductive electrode formed on the metal layer. Amorphous silicon nitride that includes the silicon nano dot is used as the light emitting layer.
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Song et al., “Improvement of the luminous intensity of light-emitting diodes by using highly transparent Ag-indium tin oxide p-type ohmic contacts”, IEEE Photonics Technology Letters, vol. 17, No. 2, Feb. 2005, pp. 291-293.
Cho Kwan-Sik
Huh Chul
Kim Kyung-Hyun
Kim Tae-Youb
Park Rae-Man
Electronics and Telecommunications Research Institute
Rabin & Berdo PC
Soward Ida M
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