Semiconductor light emitting diode producing visible light

Details Semiconductor light emitting diode producing visible light Semiconductor light emitting diode producing visible light

1995-10-24

1998-04-14

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

257 90, 257 94, 257103, H01L 3300

Patent

active

057395527

ABSTRACT:
A method of fabricating a light emitting diode (LED) device producing visible light includes growing layers of an LED emitting blue light to form a blue LED; growing layers of an LED emitting green light to form a green LED; growing layers of an LED emitting red light to form a red LED; and uniting the three LEDs directly to each other by annealing. Therefore, an LED device that can emit light of all three colors from the same region of the LED device with variable light intensity is obtained.

REFERENCES:
patent: 5138416 (1992-08-01), Brillson
patent: 5459337 (1995-10-01), Ito et al.
patent: 5583351 (1996-12-01), Brown et al.
Ikegami et al, "Electrical Characteristics Of Low Temperature Directly Bonded GaAs/InP Heterojunctions", Gallium Arsenide and Related Compounds 1992, pp. 947-948.
Tokutome et al, "High Quality MOW Structure On Si By Direct Bonding Method", Extended Abstract 28a-ZB-10 of The Japan Society of Applied Physics, 1994.
Okuno et al, "X-ray Diffraction Measurement On InP/InGaAsP Layer Directly Bonded On GaAs Substrate", Extended Abstract 31a-X-10 of The Japan Society of Applied Physics, 1994.

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