Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Patent
1995-10-24
1998-04-14
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
257 90, 257 94, 257103, H01L 3300
Patent
active
057395527
ABSTRACT:
A method of fabricating a light emitting diode (LED) device producing visible light includes growing layers of an LED emitting blue light to form a blue LED; growing layers of an LED emitting green light to form a green LED; growing layers of an LED emitting red light to form a red LED; and uniting the three LEDs directly to each other by annealing. Therefore, an LED device that can emit light of all three colors from the same region of the LED device with variable light intensity is obtained.
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patent: 5583351 (1996-12-01), Brown et al.
Ikegami et al, "Electrical Characteristics Of Low Temperature Directly Bonded GaAs/InP Heterojunctions", Gallium Arsenide and Related Compounds 1992, pp. 947-948.
Tokutome et al, "High Quality MOW Structure On Si By Direct Bonding Method", Extended Abstract 28a-ZB-10 of The Japan Society of Applied Physics, 1994.
Okuno et al, "X-ray Diffraction Measurement On InP/InGaAsP Layer Directly Bonded On GaAs Substrate", Extended Abstract 31a-X-10 of The Japan Society of Applied Physics, 1994.
Kawazu Zempei
Kimura Tatsuya
Mitsubishi Denki & Kabushiki Kaisha
Ngo Ngan V.
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