Semiconductor light-emitting diode having a p-type semiconductor

Details Semiconductor light-emitting diode having a p-type semiconductor Semiconductor light-emitting diode having a p-type semiconductor

1997-11-28

1999-12-07

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant material

257101, 257103, 257 94, H01L 3300

Patent

active

05998810&

ABSTRACT:
A semiconductor light-emitting diode exhibiting an oscillation wavelength of 450 nm or less and comprising a substrate, a lower clad layer formed on or above the substrate and mainly composed of a III-V Group compound semiconductor, an active layer formed directly on the lower clad layer and mainly composed of a III-V Group compound semiconductor, and an upper p-type clad layer formed directly on the active layer and mainly composed of a III-V Group compound semiconductor. This semiconductor light-emitting diode is characterized in that the upper p-type clad layer contains Mg, Si and at least one impurities for compensating residual donors.

REFERENCES:
patent: 5693963 (1997-12-01), Fujimoto et al.
patent: 5740192 (1998-04-01), Hatano et al.
patent: 5825052 (1998-10-01), Shakuda

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