Semiconductor light emitting diode having a capacitor

Details Semiconductor light emitting diode having a capacitor Semiconductor light emitting diode having a capacitor

1997-09-09

1999-11-02

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

257 84, 257 99, H01L 3300

Patent

active

059775653

ABSTRACT:
A semiconductor light emitting diode having a high surge resistance and high reliability has a structure which includes an additional capacitor formed between an anode and a cathode of the light emitting element. Specifically, in an LED having an n-type GaN semiconductor layer, a GaN-based active layer and a p-type GaN-based semiconductor layer on a sapphire substrate, the cathode is formed on the n-type GaN semiconductor layer and an electrode wiring extends from the top of the p-type GaN-based semiconductor layer to form a capacitor.

REFERENCES:
patent: 5479029 (1995-12-01), Uchida et al.

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