Semiconductor light-emitting diode and method for producing same

Details Semiconductor light-emitting diode and method for producing same Semiconductor light-emitting diode and method for producing same

1975-12-09

1977-01-04

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 335, 148171, 252 623GA, 357 16, 357 17, 357 18, 357 61, H01L 21208

Patent

active

040010554

ABSTRACT:
A semiconductor light-emitting diode comprising a p.sup.+-type GaAs substrate, an epitaxial p-layer of a monocrystalline solid solution of GaAlAs doped with Zn, an epitaxial n-layer of a monocrystalline solid solution of GaAlAs doped with Te, a heterojunction formed between said p- and n-layers which are doped to approximately the same concentration level, a compensated layer of a monocrystalline solid solution of GaAlAs doped with Zn and Te to a concentration level similar to that in said epitaxial n-layer, said compensated layer being disposed between said p- and n-layers and having a thickness commensurate with the diffusion length of the injected charge carriers in said n-layer. The method for producing said semiconductor light-emitting diode consists in that a substrate of GaAs and two liquid phases of Ga with Al saturated with arsenic, one containing Zn and Te, and the other containing Te are taken; the first liquid phase is brought in contact with the substrate to grow the p-layer, then a layer of the first liquid phase, whose thickness is controlled, is left on the substrate, and the second liquid phase is brought in contact therewith to alternately grow the compensated layer and the n-layer.

REFERENCES:
patent: 3747016 (1973-07-01), Kressel et al.
patent: 3752713 (1973-08-01), Sakuta et al.
patent: 3958265 (1976-05-01), Charmakadze
Boburka et al., I.B.M. Technical Disclosure Bulletin, vol. 9 No. 2 (July 1973), p. 554.
Alferov et al., Soviet Physics, vol. 3, No. 9 (Mar. 1970), pp. 1107-1110.

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