Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2011-01-18
2011-01-18
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S022000, C257S076000, C257S094000
Reexamination Certificate
active
07872266
ABSTRACT:
A high-efficiency semiconductor light emitting diode and a method for manufacturing the same are provided. The semiconductor LED has high internal quantum efficiency and can reduce the bad effect caused by the crystal defect. In the semiconductor light emitting diode, a conductive substrate has a three-dimensional top surface, and a light-emitting stack structure has a three-dimensional structure and includes an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer, which are sequentially formed on the conductive substrate. A p-electrode is formed on the p-type nitride semiconductor layer, and an n-electrode is formed on a bottom surface of the conductive substrate.
REFERENCES:
patent: 5981977 (1999-11-01), Furukawa et al.
patent: 7087932 (2006-08-01), Okuyama et al.
patent: 7122394 (2006-10-01), Okuyama et al.
patent: 2003/0180977 (2003-09-01), Suzuki et al.
patent: 2006/0157717 (2006-07-01), Nagai et al.
patent: 2007/0236130 (2007-10-01), Ito et al.
Choi Pun Jae
Hong Suk Youn
Song Sang Yeob
Jahan Bilkis
Louie Wai-Sing
McDermott Will & Emery LLP
Samsung LED Co., Ltd.
LandOfFree
Semiconductor light emitting diode and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor light emitting diode and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting diode and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2696036