Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2006-01-10
2006-01-10
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S096000, C257S097000, C257S103000, C438S022000, C438S046000, C438S047000
Reexamination Certificate
active
06984850
ABSTRACT:
A light-emitting diode includes: a semiconductor substrate; and a layered structure, made of an AlGaInP type compound semiconductor material and provided on the semiconductor substrate. The layered structure includes: a light-emitting structure composed of a pair of cladding layers and an active layer for emitting light provided between the pair of cladding layers; and a current diffusion layer which is lattice-mismatched with the light-emitting structure. A lattice mismatch Δ a/a of the current diffusion layer with respect to the light-emitting structure defined by the following expression is −1% or smaller:in-line-formulae description="In-line Formulae" end="lead"?Δa/a=(ad−ae)/aein-line-formulae description="In-line Formulae" end="tail"?where adis a lattice constant of the current diffusion layer, and aeis a lattice constant of the light-emitting structure.
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Japanese Office Action mailed Jun. 26, 2003 and translation thereof in corresponding Japanese application No. 10-236156.
Nakatsu Hiroshi
Yamamoto Osamu
Kang Donghee
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
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