Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2005-08-30
2005-08-30
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S096000, C257S097000, C257S103000, C438S022000, C438S046000, C438S047000
Reexamination Certificate
active
06936858
ABSTRACT:
A light-emitting diode includes: a semiconductor substrate; and a layered structure, made of an AlGaInP type compound semiconductor material and provided on the semiconductor substrate. The layered structure includes: a light-emitting structure composed of a pair of cladding layers and an active layer for emitting light provided between the pair of cladding layers; and a current diffusion layer which is lattice-mismatched with the light-emitting structure. A lattice mismatch Δa/a of the current diffusion layer with respect to the light-emitting structure defined by the following expression is −1% or smaller:in-line-formulae description="In-line Formulae" end="lead"?Δa/a=(ad−ae)/aein-line-formulae description="In-line Formulae" end="tail"?where adis a lattice constant of the current diffusion layer, and aeis a lattice constant of the light-emitting structure.
REFERENCES:
patent: 5008718 (1991-04-01), Fletcher et al.
patent: 5153889 (1992-10-01), Sugawara et al.
patent: 5656829 (1997-08-01), Sakaguchi et al.
patent: 5739553 (1998-04-01), Noto et al.
patent: 5814839 (1998-09-01), Hosoba
patent: 198 08 446 (1998-09-01), None
patent: 197 55 009 (1999-08-01), None
patent: 0 378 919 (1990-07-01), None
patent: 0 434 233 (1991-06-01), None
patent: 2 306 047 (1997-04-01), None
patent: 3-171679 (1991-07-01), None
patent: 7-15038 (1995-01-01), None
patent: 11-17218 (1998-01-01), None
patent: 10-242510 (1998-09-01), None
patent: 10-256667 (1998-09-01), None
Japanese Office Action mailed Jun. 26, 2003 and translation thereof in corresponding Japanese application no. 10-236156.
Nakatsu Hiroshi
Yamamoto Osamu
Kang Donghee
Lee Eddie
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
LandOfFree
Semiconductor light-emitting diode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor light-emitting diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light-emitting diode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3479729